Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

In this article, electron trapping in aluminum oxide (Al2O3) thin films grown by plasma enhanced atomic layer deposition on AlGaN/GaN heterostructures has been studied and a correlation with the presence of oxygen defects in the film has been provided. Capacitance–voltage measurements revealed the o...

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Bibliographic Details
Main Authors: Emanuela Schilirò, Patrick Fiorenza, Corrado Bongiorno, Corrado Spinella, Salvatore Di Franco, Giuseppe Greco, Raffaella Lo Nigro, Fabrizio Roccaforte
Format: Article
Language:English
Published: AIP Publishing LLC 2020-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0023735

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