Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition
In this article, electron trapping in aluminum oxide (Al2O3) thin films grown by plasma enhanced atomic layer deposition on AlGaN/GaN heterostructures has been studied and a correlation with the presence of oxygen defects in the film has been provided. Capacitance–voltage measurements revealed the o...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0023735 |