Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches

The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with...

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Main Authors: Mohd Amir Zulkefli, Mohd Ambri Mohamed, Kim S. Siow, Burhanuddin Yeop Majlis, Jothiramalingam Kulothungan, Manoharan Muruganathan, Hiroshi Mizuta
Format: Article
Language:English
Published: MDPI AG 2017-07-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/8/8/236
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spelling doaj-472af2242d85461e86f9fa1727a7e07a2020-11-25T00:47:54ZengMDPI AGMicromachines2072-666X2017-07-018823610.3390/mi8080236mi8080236Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) SwitchesMohd Amir Zulkefli0Mohd Ambri Mohamed1Kim S. Siow2Burhanuddin Yeop Majlis3Jothiramalingam Kulothungan4Manoharan Muruganathan5Hiroshi Mizuta6Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM-Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM-Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM-Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM-Bangi, Selangor, MalaysiaSchool of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, JapanSchool of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, JapanSchool of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, JapanThe miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with beam structures which are perforated and intact. Pull-in and pull-out characteristics are analyzed by using the FEM approach provided by IntelliSuite software, version 8.8.5.1. The FEM results are consistent with the published experimental data. This analysis shows the possibility of achieving a low pull-in voltage that is below 2 V for a ratio below 15:0.03:0.7 value for the graphene beam length, thickness, and air gap thickness, respectively. The introduction of perforation in the graphene beam-based NEM switch further achieved the pull-in voltage as low as 1.5 V for a 250 nm hole length, 100 nm distance between each hole, and 12-number of hole column. Then, a von Mises stress analysis is conducted to investigate the mechanical stability of the intact and perforated graphene-based NEM switch. This analysis shows that a longer and thinner graphene beam reduced the von Mises stress. The introduction of perforation concept further reduced the von Mises stress at the graphene beam end and the beam center by approximately ~20–35% and ~10–20%, respectively. These theoretical results, performed by FEM simulation, are expected to expedite improvements in the working parameter and dimension for low voltage and better mechanical stability operation of graphene-based NEM switch device fabrication.https://www.mdpi.com/2072-666X/8/8/236nanoelectromechanical (NEM) switchgrapheneintact beam structureperforated beam structurefinite element simulation (FEM)pull-in voltage characteristicvon Mises stress
collection DOAJ
language English
format Article
sources DOAJ
author Mohd Amir Zulkefli
Mohd Ambri Mohamed
Kim S. Siow
Burhanuddin Yeop Majlis
Jothiramalingam Kulothungan
Manoharan Muruganathan
Hiroshi Mizuta
spellingShingle Mohd Amir Zulkefli
Mohd Ambri Mohamed
Kim S. Siow
Burhanuddin Yeop Majlis
Jothiramalingam Kulothungan
Manoharan Muruganathan
Hiroshi Mizuta
Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
Micromachines
nanoelectromechanical (NEM) switch
graphene
intact beam structure
perforated beam structure
finite element simulation (FEM)
pull-in voltage characteristic
von Mises stress
author_facet Mohd Amir Zulkefli
Mohd Ambri Mohamed
Kim S. Siow
Burhanuddin Yeop Majlis
Jothiramalingam Kulothungan
Manoharan Muruganathan
Hiroshi Mizuta
author_sort Mohd Amir Zulkefli
title Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
title_short Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
title_full Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
title_fullStr Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
title_full_unstemmed Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
title_sort three-dimensional finite element method simulation of perforated graphene nano-electro-mechanical (nem) switches
publisher MDPI AG
series Micromachines
issn 2072-666X
publishDate 2017-07-01
description The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with beam structures which are perforated and intact. Pull-in and pull-out characteristics are analyzed by using the FEM approach provided by IntelliSuite software, version 8.8.5.1. The FEM results are consistent with the published experimental data. This analysis shows the possibility of achieving a low pull-in voltage that is below 2 V for a ratio below 15:0.03:0.7 value for the graphene beam length, thickness, and air gap thickness, respectively. The introduction of perforation in the graphene beam-based NEM switch further achieved the pull-in voltage as low as 1.5 V for a 250 nm hole length, 100 nm distance between each hole, and 12-number of hole column. Then, a von Mises stress analysis is conducted to investigate the mechanical stability of the intact and perforated graphene-based NEM switch. This analysis shows that a longer and thinner graphene beam reduced the von Mises stress. The introduction of perforation concept further reduced the von Mises stress at the graphene beam end and the beam center by approximately ~20–35% and ~10–20%, respectively. These theoretical results, performed by FEM simulation, are expected to expedite improvements in the working parameter and dimension for low voltage and better mechanical stability operation of graphene-based NEM switch device fabrication.
topic nanoelectromechanical (NEM) switch
graphene
intact beam structure
perforated beam structure
finite element simulation (FEM)
pull-in voltage characteristic
von Mises stress
url https://www.mdpi.com/2072-666X/8/8/236
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