A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts

A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts

Abstract A novel high-performance rectangular gate U channel FET (RGUC FET) for extreme integrated distance between source and drain contacts is proposed in this paper. The RGUC FET represents nearly ideal subthreshold characteristics till the distance between source/drain (S/D) contacts reduced to...

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Bibliographic Details
Main Authors: Xi Liu, Zhengliang Xia, Xiaoshi Jin, Jong-Ho Lee
Format: Article
Language:English
Published: SpringerOpen 2019-02-01
Series:Nanoscale Research Letters
Subjects:
Rectangular gate U channel
Extreme integration
Quantum simulation
Online Access:http://link.springer.com/article/10.1186/s11671-019-2879-0

Internet

http://link.springer.com/article/10.1186/s11671-019-2879-0

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