A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO<sub>2</sub> high-k dielectric extend above source and drain, the integrated density...

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Bibliographic Details
Main Authors: Lu-Rong Gan, Ya-Rong Wang, Lin Chen, Hao Zhu, Qing-Qing Sun
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/10/9/558