A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO<sub>2</sub> high-k dielectric extend above source and drain, the integrated density...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-08-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/10/9/558 |