Electrical Characteristics of LDD and LDD-Free FinFET Devices of Dimension Compatible With 14 nm Technology Node
FinFET devices with and without LDD implantation has been studied for dimensions compatible with leading 14nm technology node. Devices without LDD have better electrostatic characteristics with SS = 65mV/dec and DIBL = 33mV. The nFET transistors with no LDD have device Vtsat mismatch reduction by 20...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9206537/ |