Specifies of the formed fast cover silica diodes
The authors have investigated the dependence of the current recovery time trr on the diode structures annealing parameters after irradiation by electrons е– with the energy of 4 and 10 MeV, and the fluence of 6•1015 and 8•1014 cm–2, respectively. Diodes with minimal time trr and maximum shape factor...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2008-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2008/3_2008/pdf/09.zip |