InP double heterojunction bipolar transistors for terahertz computed tomography

InP double heterojunction bipolar transistors for terahertz computed tomography

We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacita...

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Bibliographic Details
Main Authors: Dominique Coquillat, Alexandre Duhant, Meriam Triki, Virginie Nodjiadjim, Agnieszka Konczykowska, Muriel Riet, Nina Dyakonova, Olivier Strauss, Wojciech Knap
Format: Article
Language:English
Published: AIP Publishing LLC 2018-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5039331

Internet

http://dx.doi.org/10.1063/1.5039331

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