Advanced Si solid phase crystallization for vertical channel in vertical NANDs
The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-07-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4887418 |