Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis
A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel. The performance of the proposed device is assessed using 2-D simulations. We establish the prospect of real...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7009956/ |