Improved contact resistivity and enhanced mobility of metal-graphene FET by inserting ultra-thin MoOx layer at source/drain region
Achieving low resistance contacts and high carrier mobility are common concerns for obtaining high performance of graphene devices. In graphene FETs (GFETs), the work functions (WF) of electrode materials and metal-graphene (M-G) contact configurations have remarkable influences on contact propertie...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5100198 |