Pulsed-N2 assisted growth of 5-20 nm thick β-W films

Pulsed-N2 assisted growth of 5-20 nm thick β-W films

A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray d...

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Bibliographic Details
Main Authors:	Avyaya J. Narasimham, Avery Green, Richard J. Matyi, Prasanna Khare, Tuan Vo, Alain Diebold, Vincent P. LaBella
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2015-11-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4935372

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