Pulsed-N2 assisted growth of 5-20 nm thick β-W films

A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray d...

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Main Authors: Avyaya J. Narasimham, Avery Green, Richard J. Matyi, Prasanna Khare, Tuan Vo, Alain Diebold, Vincent P. LaBella
Format: Article
Language:English
Published: AIP Publishing LLC 2015-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4935372
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spelling doaj-4401e3087de944c1a23bb80757f6845c2020-11-24T20:43:51ZengAIP Publishing LLCAIP Advances2158-32262015-11-01511117107117107-910.1063/1.4935372011511ADVPulsed-N2 assisted growth of 5-20 nm thick β-W filmsAvyaya J. Narasimham0Avery Green1Richard J. Matyi2Prasanna Khare3Tuan Vo4Alain Diebold5Vincent P. LaBella6College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USAA technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.http://dx.doi.org/10.1063/1.4935372
collection DOAJ
language English
format Article
sources DOAJ
author Avyaya J. Narasimham
Avery Green
Richard J. Matyi
Prasanna Khare
Tuan Vo
Alain Diebold
Vincent P. LaBella
spellingShingle Avyaya J. Narasimham
Avery Green
Richard J. Matyi
Prasanna Khare
Tuan Vo
Alain Diebold
Vincent P. LaBella
Pulsed-N2 assisted growth of 5-20 nm thick β-W films
AIP Advances
author_facet Avyaya J. Narasimham
Avery Green
Richard J. Matyi
Prasanna Khare
Tuan Vo
Alain Diebold
Vincent P. LaBella
author_sort Avyaya J. Narasimham
title Pulsed-N2 assisted growth of 5-20 nm thick β-W films
title_short Pulsed-N2 assisted growth of 5-20 nm thick β-W films
title_full Pulsed-N2 assisted growth of 5-20 nm thick β-W films
title_fullStr Pulsed-N2 assisted growth of 5-20 nm thick β-W films
title_full_unstemmed Pulsed-N2 assisted growth of 5-20 nm thick β-W films
title_sort pulsed-n2 assisted growth of 5-20 nm thick β-w films
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-11-01
description A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.
url http://dx.doi.org/10.1063/1.4935372
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