Pulsed-N2 assisted growth of 5-20 nm thick β-W films
A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray d...
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Online Access: | http://dx.doi.org/10.1063/1.4935372 |
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doaj-4401e3087de944c1a23bb80757f6845c2020-11-24T20:43:51ZengAIP Publishing LLCAIP Advances2158-32262015-11-01511117107117107-910.1063/1.4935372011511ADVPulsed-N2 assisted growth of 5-20 nm thick β-W filmsAvyaya J. Narasimham0Avery Green1Richard J. Matyi2Prasanna Khare3Tuan Vo4Alain Diebold5Vincent P. LaBella6College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USACollege of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USAA technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.http://dx.doi.org/10.1063/1.4935372 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Avyaya J. Narasimham Avery Green Richard J. Matyi Prasanna Khare Tuan Vo Alain Diebold Vincent P. LaBella |
spellingShingle |
Avyaya J. Narasimham Avery Green Richard J. Matyi Prasanna Khare Tuan Vo Alain Diebold Vincent P. LaBella Pulsed-N2 assisted growth of 5-20 nm thick β-W films AIP Advances |
author_facet |
Avyaya J. Narasimham Avery Green Richard J. Matyi Prasanna Khare Tuan Vo Alain Diebold Vincent P. LaBella |
author_sort |
Avyaya J. Narasimham |
title |
Pulsed-N2 assisted growth of 5-20 nm thick β-W films |
title_short |
Pulsed-N2 assisted growth of 5-20 nm thick β-W films |
title_full |
Pulsed-N2 assisted growth of 5-20 nm thick β-W films |
title_fullStr |
Pulsed-N2 assisted growth of 5-20 nm thick β-W films |
title_full_unstemmed |
Pulsed-N2 assisted growth of 5-20 nm thick β-W films |
title_sort |
pulsed-n2 assisted growth of 5-20 nm thick β-w films |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2015-11-01 |
description |
A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W. |
url |
http://dx.doi.org/10.1063/1.4935372 |
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