Numerical Study of a Thyristor Injection Insulated Gate Bipolar Transistor (TI-IGBT) Using P-N-P Collector
A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side. The additional p-layer and n-layer form a parasitic n-p-n transistor to reduce th...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8843961/ |