Numerical Study of a Thyristor Injection Insulated Gate Bipolar Transistor (TI-IGBT) Using P-N-P Collector

Numerical Study of a Thyristor Injection Insulated Gate Bipolar Transistor (TI-IGBT) Using P-N-P Collector

A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side. The additional p-layer and n-layer form a parasitic n-p-n transistor to reduce th...

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Bibliographic Details
Main Authors: Mengxuan Jiang, Yulei Wang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Conductivity modulation
thyristor injection
P-N-P collector
saturation voltage drop
IGBT
Online Access:https://ieeexplore.ieee.org/document/8843961/

Internet

https://ieeexplore.ieee.org/document/8843961/

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