Simulation of an Improved Design for n-Electrode with Holes for Thin-GaN Light-Emitting Diodes
A novel design is proposed for n-electrode with holes to be applied in Thin-GaN light-emitting diodes (LEDs). The influence of the n-electrode with holes on the thermal and electrical characteristics of a Thin-GaN LED chip is investigated using a three-dimensional numerical simulation. The variation...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2013-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2013/805361 |