Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) with...

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Bibliographic Details
Main Authors: Shuaijie Wang, Fuwen Qin, Yizhen Bai, Dong Zhang, Jingdan Zhang
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Coatings
Subjects:
InN
Online Access:https://www.mdpi.com/2079-6412/10/12/1185