GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization

GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization

Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on G...

Full description

Bibliographic Details
Main Authors: Tadas Paulauskas, Vaidas Pačebutas, Andrejus Geižutis, Sandra Stanionytė, Evelina Dudutienė, Martynas Skapas, Arnas Naujokaitis, Viktorija Strazdienė, Bronislovas Čechavičius, Mária Čaplovičová, Viliam Vretenár, Rafał Jakieła, Arūnas Krotkus
Format: Article
Language:English
Published: Nature Publishing Group 2020-02-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-020-58812-y

Internet

https://doi.org/10.1038/s41598-020-58812-y

Similar Items