Strain driven migration of In during the growth of InAs/GaAs quantum posts
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during the growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-dr...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-08-01
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| Series: | APL Materials |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4818358 |
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doaj-4177a5a21979419e99402853240ee2ef2020-11-24T22:53:29ZengAIP Publishing LLCAPL Materials2166-532X2013-08-011202211202211210.1063/1.4818358Strain driven migration of In during the growth of InAs/GaAs quantum postsD. Alonso-ÁlvarezB. AlénJ. M. RipaldaA. RiveraA. G. TaboadaJ. M. LlorensY. GonzálezL. GonzálezF. BrionesUsing the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during the growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures. http://link.aip.org/link/doi/10.1063/1.4818358 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
D. Alonso-Álvarez B. Alén J. M. Ripalda A. Rivera A. G. Taboada J. M. Llorens Y. González L. González F. Briones |
| spellingShingle |
D. Alonso-Álvarez B. Alén J. M. Ripalda A. Rivera A. G. Taboada J. M. Llorens Y. González L. González F. Briones Strain driven migration of In during the growth of InAs/GaAs quantum posts APL Materials |
| author_facet |
D. Alonso-Álvarez B. Alén J. M. Ripalda A. Rivera A. G. Taboada J. M. Llorens Y. González L. González F. Briones |
| author_sort |
D. Alonso-Álvarez |
| title |
Strain driven migration of In during the growth of InAs/GaAs quantum posts |
| title_short |
Strain driven migration of In during the growth of InAs/GaAs quantum posts |
| title_full |
Strain driven migration of In during the growth of InAs/GaAs quantum posts |
| title_fullStr |
Strain driven migration of In during the growth of InAs/GaAs quantum posts |
| title_full_unstemmed |
Strain driven migration of In during the growth of InAs/GaAs quantum posts |
| title_sort |
strain driven migration of in during the growth of inas/gaas quantum posts |
| publisher |
AIP Publishing LLC |
| series |
APL Materials |
| issn |
2166-532X |
| publishDate |
2013-08-01 |
| description |
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during the growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures. |
| url |
http://link.aip.org/link/doi/10.1063/1.4818358 |
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