Strain driven migration of In during the growth of InAs/GaAs quantum posts

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during the growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-dr...

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Bibliographic Details
Main Authors: D. Alonso-Álvarez, B. Alén, J. M. Ripalda, A. Rivera, A. G. Taboada, J. M. Llorens, Y. González, L. González, F. Briones
Format: Article
Language:English
Published: AIP Publishing LLC 2013-08-01
Series:APL Materials
Online Access:http://link.aip.org/link/doi/10.1063/1.4818358

Internet

http://link.aip.org/link/doi/10.1063/1.4818358

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