Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials

This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@I...

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Bibliographic Details
Main Authors: Gregorio García, Pablo Sánchez-Palencia, Pablo Palacios, Perla Wahnón
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Nanomaterials
Subjects:
inp
dft
gw
Online Access:https://www.mdpi.com/2079-4991/10/2/283