Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)
This paper presents, for the first time, a displacement sensor with inherent read-out circuit using an inverter built with WG-FET that has 16-nm-thick single crystalline silicon film. In WG-FET, electrical double layer (EDL) capacitances are formed at water/silicon and water/top gate interfaces. The...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-11-01
|
| Series: | Proceedings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2504-3900/2/13/926 |