High-Density Well-Aligned Dislocations Introduced by Plastic Deformation in Bi<sub>1−<i>x</i></sub>Sb<i><sub>x</sub></i> Topological Insulator Single Crystals

High-Density Well-Aligned Dislocations Introduced by Plastic Deformation in Bi<sub>1−<i>x</i></sub>Sb<i><sub>x</sub></i> Topological Insulator Single Crystals

Topological insulators (TIs) have a bulk bandgap and gapless edge or surface states that host helically spin-polarized Dirac fermions. Theoretically, it has been predicted that gapless states could also be formed along dislocations in TIs. Recently, conductivity measurements on plastically deformed...

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Bibliographic Details
Main Authors: Yuki Tokumoto, Riku Fujiwara, Keiichi Edagawa
Format: Article
Language:English
Published: MDPI AG 2019-06-01
Series:Crystals
Subjects:
topological insulators
bismuth antimony
single crystals
dislocations
transmission electron microscopy
Online Access:https://www.mdpi.com/2073-4352/9/6/317

Internet

https://www.mdpi.com/2073-4352/9/6/317

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