Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping

Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping

We provide a theoretical analysis of the relative merits of tensile strain and n-type doping as approaches to realizing an efficient low-power germanium laser. Ultimately, tensile strain offers threshold reductions of over 200x, and significant improvements in slope efficiency compared with the rece...

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Bibliographic Details
Main Authors: Birendra Dutt, Devanand S. Sukhdeo, Donguk Nam, Boris M. Vulovic, Ze Yuan, Krishna C. Saraswat
Format: Article
Language:English
Published: IEEE 2012-01-01
Series:IEEE Photonics Journal
Subjects:
Semiconductor lasers
diode lasers
semiconductor materials
optoelectronic materials
infrared lasers
theory and design
Online Access:https://ieeexplore.ieee.org/document/6327582/

Internet

https://ieeexplore.ieee.org/document/6327582/

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