NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 va...

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Bibliographic Details
Main Authors: Muhammad Hussain, Syed Hassan Abbas Jaffery, Asif Ali, Cong Dinh Nguyen, Sikandar Aftab, Muhammad Riaz, Sohail Abbas, Sajjad Hussain, Yongho Seo, Jongwan Jung
Format: Article
Language:English
Published: Nature Publishing Group 2021-02-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-83187-z

Internet

https://doi.org/10.1038/s41598-021-83187-z

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