Fabrication and Characterization of a Tunable In-plane Resonator with Low Driving Voltage
This study presents the fabrication and characterization of a micromechanical tunable in-plane resonator. The resonator is manufactured using the commercial 0.35 µm complementary metal oxide semiconductor (CMOS) process. The resonator is made of aluminum, and the sacrificial layer is silicon dioxide...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2009-03-01
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Series: | Sensors |
Subjects: | |
Online Access: | http://www.mdpi.com/1424-8220/9/3/2062/ |