Fabrication and Characterization of a Tunable In-plane Resonator with Low Driving Voltage

This study presents the fabrication and characterization of a micromechanical tunable in-plane resonator. The resonator is manufactured using the commercial 0.35 µm complementary metal oxide semiconductor (CMOS) process. The resonator is made of aluminum, and the sacrificial layer is silicon dioxide...

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Bibliographic Details
Main Authors: Chi-Yuan Lee, Ching-Liang Dai, Cheng-Chih Hsu, Pin-Hsu Kao
Format: Article
Language:English
Published: MDPI AG 2009-03-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/9/3/2062/