Signatures of self-interstitials in laser-melted and regrown silicon
Photoluminescence spectroscopy investigates epitaxially regrown silicon single crystals after pulsed laser melting for atomic-level lattice defects. The measurements identify a transition from a regime free of defect-related spectral lines to a regime in which spectral lines appear originating from...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0050161 |