Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that the electrons in the isolated nanowire channel d...

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Bibliographic Details
Main Authors: Ki-Sik Im, Gokhan Atmaca, Chul-Ho Won, Raphael Caulmilone, Sorin Cristoloveanu, Yong-Tae Kim, Jung-Hee Lee
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN
MOSFET
nanowire
gate-all-around
GaN-on-insulator
dynamic mode
Online Access:https://ieeexplore.ieee.org/document/8293760/

Internet

https://ieeexplore.ieee.org/document/8293760/

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