Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed. According to this p-diode model, the Schottky contact current is considered to flow through m parallel-connected internal diodes,...

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Bibliographic Details
Main Authors: Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Schottky diode
parallel conduction
inhomogeneity
non-uniformity parameter
silicon carbide
Online Access:https://ieeexplore.ieee.org/document/9234459/

Internet

https://ieeexplore.ieee.org/document/9234459/

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