Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3<sup>rd</sup>-order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices o...

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Bibliographic Details
Main Authors: Steffan Gwyn, Scott Watson, Thomas Slight, Martin Knapp, Shaun Viola, Pavlo Ivanov, Weikang Zhang, Amit Yadav, Edik Rafailov, Mohsin Haji, Kevin E Doherty, Szymon Stanczyk, Szymon Grzanka, Piotr Perlin, Stephen P Najda, Mike Leszczyski, Anthony E Kelly
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Photonics Journal
Subjects:
Gallium Nitride
distributed feedback laser diode
optical communications
Online Access:https://ieeexplore.ieee.org/document/9296250/

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https://ieeexplore.ieee.org/document/9296250/

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