On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO<sub>2</sub> and Si<sub>x</sub>N<sub>y</sub>) in Multi-Component Fluorocarbon Gas Mixtures

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO<sub>2</sub> and Si<sub>x</sub>N<sub>y</sub>) in Multi-Component Fluorocarbon Gas Mixtures

This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO<sub>2</sub>, and Si<sub>x</sub>N<sub>y</sub>) as well as for the silicon itself in...

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Bibliographic Details
Main Authors: Alexander Efremov, Byung Jun Lee, Kwang-Ho Kwon
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Materials
Subjects:
fluorocarbon gas plasma
etching kinetics
etching mechanism
plasma parameters
active species
polymerization
Online Access:https://www.mdpi.com/1996-1944/14/6/1432

Internet

https://www.mdpi.com/1996-1944/14/6/1432

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