AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The max...

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Bibliographic Details
Main Authors: Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek
Format: Article
Language:English
Published: MDPI AG 2018-10-01
Series:Micromachines
Subjects:
high electron mobility transistors
high electron mobility transistor (HEMT)
AlGaN/GaN
ohmic contact
regrown contact
ammonothermal GaN
power amplifier
Online Access:https://www.mdpi.com/2072-666X/9/11/546

Internet

https://www.mdpi.com/2072-666X/9/11/546

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