A <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

A <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has an extremely low off-state leakage current, a practical driving capability, and tolerance again...

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Bibliographic Details
Main Authors: Hitoshi Kunitake, Kazuaki Ohshima, Kazuki Tsuda, Noriko Matsumoto, Tatsuki Koshida, Satoru Ohshita, Hiromi Sawai, Yuichi Yanagisawa, Shiori Saga, Ryo Arasawa, Takako Seki, Ryunosuke Honda, Haruyuki Baba, Daigo Shimada, Hajime Kimura, Ryo Tokumaru, Tomoaki Atsumi, Kiyoshi Kato, Shunpei Yamazaki
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">C</italic>-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO)
leakage current
nonvolatile memory
random access memory
Online Access:https://ieeexplore.ieee.org/document/8684203/

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https://ieeexplore.ieee.org/document/8684203/

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