Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode
Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) measurements ranging from 300 K to 150 K. Ideality factor (n) and barrier height (ϕ) for the Schottky device were obtained from I–V characteristic...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4993553 |