An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure
We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel mat...
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| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/7987694/ |
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doaj-3a5131c05250467696e5149dc49d647a2021-03-29T18:45:02ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015533533910.1109/JEDS.2017.27253407987694An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS StructureMuhammad Mainul Islam0https://orcid.org/0000-0003-2180-7391Md. Nur Kutubul Alam1https://orcid.org/0000-0002-4608-3556Md. Shamim Sarker2Md. Rafiqul Islam3Anisul Haque4https://orcid.org/0000-0001-8023-8104Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, BangladeshDepartment of Electrical and Electronic Engineering, East West University, Dhaka, BangladeshWe propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel materials.https://ieeexplore.ieee.org/document/7987694/Gate capacitancecompact modelXOIIII-V-on-insulator |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Muhammad Mainul Islam Md. Nur Kutubul Alam Md. Shamim Sarker Md. Rafiqul Islam Anisul Haque |
| spellingShingle |
Muhammad Mainul Islam Md. Nur Kutubul Alam Md. Shamim Sarker Md. Rafiqul Islam Anisul Haque An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure IEEE Journal of the Electron Devices Society Gate capacitance compact model XOI III-V-on-insulator |
| author_facet |
Muhammad Mainul Islam Md. Nur Kutubul Alam Md. Shamim Sarker Md. Rafiqul Islam Anisul Haque |
| author_sort |
Muhammad Mainul Islam |
| title |
An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure |
| title_short |
An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure |
| title_full |
An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure |
| title_fullStr |
An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure |
| title_full_unstemmed |
An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure |
| title_sort |
analytical model for the gate c–v characteristics of utb iii—v-on-insulator mis structure |
| publisher |
IEEE |
| series |
IEEE Journal of the Electron Devices Society |
| issn |
2168-6734 |
| publishDate |
2017-01-01 |
| description |
We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel materials. |
| topic |
Gate capacitance compact model XOI III-V-on-insulator |
| url |
https://ieeexplore.ieee.org/document/7987694/ |
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