An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure

An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure

We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel mat...

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Bibliographic Details
Main Authors: Muhammad Mainul Islam, Md. Nur Kutubul Alam, Md. Shamim Sarker, Md. Rafiqul Islam, Anisul Haque
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gate capacitance
compact model
XOI
III-V-on-insulator
Online Access:https://ieeexplore.ieee.org/document/7987694/

Internet

https://ieeexplore.ieee.org/document/7987694/

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