Wafer‐fused 1300 nm VCSELs with an active region based on superlattice
Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operati...
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| Format: | Article |
| Language: | English |
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Wiley
2021-08-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12232 |
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doaj-3a12465c1f87409288f7b2d16f15df022021-09-06T17:33:19ZengWileyElectronics Letters0013-51941350-911X2021-08-01571869769810.1049/ell2.12232Wafer‐fused 1300 nm VCSELs with an active region based on superlatticeSergey Blokhin0Andrey Babichev1Andrey Gladyshev2Leonid Karachinsky3Innokenty Novikov4Alexey Blokhin5Stanislav Rochas6Dmitrii Denisov7Kirill Voropaev8Alexander Ionov9Nikolay Ledentsov10Anton Egorov11Ioffe Institute St. Petersburg RussiaITMO University St. Petersburg RussiaConnector Optics LLC St. Petersburg RussiaITMO University St. Petersburg RussiaITMO University St. Petersburg RussiaIoffe Institute St. Petersburg RussiaITMO University St. Petersburg RussiaSaint Petersburg Electrotechnical University “LETI” St. Petersburg RussiaJSC OKB‐Planeta V. Novgorod RussiaJSC OKB‐Planeta V. Novgorod RussiaVI Systems GmbH Berlin GermanyConnector Optics LLC St. Petersburg RussiaAbstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.https://doi.org/10.1049/ell2.12232 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Sergey Blokhin Andrey Babichev Andrey Gladyshev Leonid Karachinsky Innokenty Novikov Alexey Blokhin Stanislav Rochas Dmitrii Denisov Kirill Voropaev Alexander Ionov Nikolay Ledentsov Anton Egorov |
| spellingShingle |
Sergey Blokhin Andrey Babichev Andrey Gladyshev Leonid Karachinsky Innokenty Novikov Alexey Blokhin Stanislav Rochas Dmitrii Denisov Kirill Voropaev Alexander Ionov Nikolay Ledentsov Anton Egorov Wafer‐fused 1300 nm VCSELs with an active region based on superlattice Electronics Letters |
| author_facet |
Sergey Blokhin Andrey Babichev Andrey Gladyshev Leonid Karachinsky Innokenty Novikov Alexey Blokhin Stanislav Rochas Dmitrii Denisov Kirill Voropaev Alexander Ionov Nikolay Ledentsov Anton Egorov |
| author_sort |
Sergey Blokhin |
| title |
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice |
| title_short |
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice |
| title_full |
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice |
| title_fullStr |
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice |
| title_full_unstemmed |
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice |
| title_sort |
wafer‐fused 1300 nm vcsels with an active region based on superlattice |
| publisher |
Wiley |
| series |
Electronics Letters |
| issn |
0013-5194 1350-911X |
| publishDate |
2021-08-01 |
| description |
Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps. |
| url |
https://doi.org/10.1049/ell2.12232 |
| work_keys_str_mv |
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1717779045998919680 |