Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operati...

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Bibliographic Details
Main Authors: Sergey Blokhin, Andrey Babichev, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Stanislav Rochas, Dmitrii Denisov, Kirill Voropaev, Alexander Ionov, Nikolay Ledentsov, Anton Egorov
Format: Article
Language:English
Published: Wiley 2021-08-01
Series:Electronics Letters
Online Access:https://doi.org/10.1049/ell2.12232

Internet

https://doi.org/10.1049/ell2.12232

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