Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature

Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature

We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting p...

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Main Authors: I. S. Yu, T. H. Wu, K. Y. Wu, H. H. Cheng, V. I. Mashanov, A. I. Nikiforov, O. P. Pchelyakov, X. S. Wu
Format: Article
Language:English
Published: AIP Publishing LLC 2011-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.3656246
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spelling doaj-3a07c72e3f0d46849b52308c922c68072020-11-24T21:22:19ZengAIP Publishing LLCAIP Advances2158-32262011-12-0114042118042118-710.1063/1.3656246019104ADVInvestigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperatureI. S. Yu0T. H. Wu1K. Y. Wu2H. H. Cheng3V. I. Mashanov4A. I. Nikiforov5O. P. Pchelyakov6X. S. Wu7Center for Condensed Matter Science and Graduate Institute of Electronics Engineering, 1, Roosevelt Road, Section 4, National Taiwan University, Taipei, TaiwanCenter for Condensed Matter Science and Graduate Institute of Electronics Engineering, 1, Roosevelt Road, Section 4, National Taiwan University, Taipei, TaiwanCenter for Condensed Matter Science and Graduate Institute of Electronics Engineering, 1, Roosevelt Road, Section 4, National Taiwan University, Taipei, TaiwanCenter for Condensed Matter Science and Graduate Institute of Electronics Engineering, 1, Roosevelt Road, Section 4, National Taiwan University, Taipei, TaiwanA.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentyev Avenue, 13, Novosibirsk 630090, RussiaA.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentyev Avenue, 13, Novosibirsk 630090, RussiaA.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentyev Avenue, 13, Novosibirsk 630090, RussiaDepartment of Physics, Nanjing University, Nanjing, ChinaWe report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting point of Sn. Analysis of various measurements shows that the Ge1-xSnx film is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present investigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices.http://dx.doi.org/10.1063/1.3656246
collection DOAJ
language English
format Article
sources DOAJ
author I. S. Yu
T. H. Wu
K. Y. Wu
H. H. Cheng
V. I. Mashanov
A. I. Nikiforov
O. P. Pchelyakov
X. S. Wu
spellingShingle I. S. Yu
T. H. Wu
K. Y. Wu
H. H. Cheng
V. I. Mashanov
A. I. Nikiforov
O. P. Pchelyakov
X. S. Wu
Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
AIP Advances
author_facet I. S. Yu
T. H. Wu
K. Y. Wu
H. H. Cheng
V. I. Mashanov
A. I. Nikiforov
O. P. Pchelyakov
X. S. Wu
author_sort I. S. Yu
title Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
title_short Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
title_full Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
title_fullStr Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
title_full_unstemmed Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
title_sort investigation of ge1-xsnx/ge with high sn composition grown at low-temperature
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2011-12-01
description We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting point of Sn. Analysis of various measurements shows that the Ge1-xSnx film is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present investigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices.
url http://dx.doi.org/10.1063/1.3656246
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