Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting p...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3656246 |