GFET Asymmetric Transfer Response Analysis through Access Region Resistances

GFET Asymmetric Transfer Response Analysis through Access Region Resistances

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentra...

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Bibliographic Details
Main Authors: Alejandro Toral-Lopez, Enrique G. Marin, Francisco Pasadas, Jose Maria Gonzalez-Medina, Francisco G. Ruiz, David Jiménez, Andres Godoy
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Nanomaterials
Subjects:
GFET
RF
access region
Online Access:https://www.mdpi.com/2079-4991/9/7/1027

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