GFET Asymmetric Transfer Response Analysis through Access Region Resistances
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentra...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-07-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/9/7/1027 |