Electromigration analysis of FinFET self-heating
In advanced node, FinFET processes provide power, performance, and area benefits over planar technologies. But a vexing problem aggravated by FinFET is the greater local device current density, which translates to an increased concern for signal and power rail metal electromigration reliability fail...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2019-08-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000107393 |