Simulation of electron transfer processes in a semiconductor structure using graphene and boron nitride
This paper presents the results of simulating the electron transfer processes in a three-dimensional semiconductor structure containing graphene and layers of boron hexagonal nitride using the Monte – Carlo method. Graphene is currently considered one of the most promising materials for the creation...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-11-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/2902 |