Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resist...

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Bibliographic Details
Main Authors: Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte
Format: Article
Language:English
Published: Beilstein-Institut 2017-01-01
Series:Beilstein Journal of Nanotechnology
Subjects:
contact resistance
mobility
MoS2
temperature dependence
threshold voltage
Online Access:https://doi.org/10.3762/bjnano.8.28

Internet

https://doi.org/10.3762/bjnano.8.28

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