Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction
We deposited a p-i-n structure device with alternative amorphous Si (a-Si) and amorphous SiC (a-SiC) multilayers as an intrinsic layer in a plasma-enhanced chemical vapor deposition (PECVD) system. A KrF pulsed excimer laser-induced crystallization of a-Si/a-SiC stacked structures was used to prepar...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6690105/ |