Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the tempera...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4904068 |