Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

This paper introduces a novel surface passivation using Si<sub>3</sub>N<sub>4</sub> (20-nm)/Al<sub>2</sub>O<sub>3</sub> (15-nm) stack layers in InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs). The new technology gives rise to good dc...

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Bibliographic Details
Main Authors: Peng Ding, Chen Chen, Muhammad Asif, Xi Wang, Jiebin Niu, Feng Yang, Wuchang Ding, Yongbo Su, Dahai Wang, Zhi Jin
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InP-based high-electron-mobility transistors
Si₃N₄/Al₂O₃ stack layer passivation
DC characteristic
RF characteristic
small-signal modelling
Online Access:https://ieeexplore.ieee.org/document/8098644/

Internet

https://ieeexplore.ieee.org/document/8098644/

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