Effect of Deposition Temperature on the Physical Performance of n-ZnO/p-Si Heterojunction
Comparative study of the physical characteristics of n-ZnO/p-Si heterojunction diode has been done as a function of deposition temperature in the range of 300-600 °C. Transparent conducting (TC) Zinc Oxide (ZnO) thin films were deposited by atmospheric pressure chemical vapor deposition (APCVD) tech...
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| Format: | Article |
| Language: | Arabic |
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College of Education for Pure Sciences
2020-06-01
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| Series: | مجلة التربية والعلم |
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| Online Access: | https://edusj.mosuljournals.com/article_164389_09ac639ba21582acaf1d8cfb59b2f9d5.pdf |