Fluid simulation of the plasma uniformity in new multi-directional source capacitively coupled plasma

• Main Authors: Wenchong Ouyang, Chengbiao Ding, Qi Liu, Shuzhan Gao, Weifeng Deng, Zhengwei Wu
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2021-07-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/5.0062272

A 2D drift diffusion fluid model was employed to study the plasma uniformity of different capacitively coupled plasma (CCP) in argon discharges based on the COMSOL platform. The numerical results show that compared with the traditional CCP device that discharges between plates, the plasma uniformity of CCP device discharge by inner capacitors (CCP-ICD) has been significantly improved overall. Then, the influence of the number of capacitors and the capacitor spacing on the plasma uniformity of CCP-ICD was analyzed. The plasma uniformity can reach 89.5% in the radial direction under the best parameters, but the electron number density is reduced by an order of magnitude. In order to obtain a CCP source with high density and better uniformity, a new multi-directional source CCP-ICD was designed and numerically analyzed. The simulation results show that the new multi-directional source CCP-ICD can improve the uniformity in both radial and axial directions by about 40% without reducing the plasma density. The above conclusions show that the multi-directional source CPP-ICD device designed in this paper has great application prospects in the microelectronic and semiconductor industries.